Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)
Product Name |
Single Crystal Silicon Wafer |
Cat No. |
NCZ-NSC327/20 |
Diameter |
4 inches |
Doping |
undoped |
Thickness |
400~415+/-10um |
Resistivity |
4000 5000 ohms.cm Undoped |
Orientation |
<100>+/-0.5 |
Polishing |
one side polished |
Application |
Research Material |
Thickness |
525 Micron |
Resistivity |
1-10 ohm-cm |
Polished |
Single side polished |
Provided in Single wafer case.
Description:
Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.
Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material – CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)