Single Crystal Silicon N Type
Product Name: Single Crystal Silicon N Type
Product Name |
Single Crystal Silicon N Type |
Cat No. |
NZC-NSC330/20 |
MF |
Si/SiO2 |
Día |
100 mm (4 inches) |
Type/Dopant |
N
|
Orientation |
<100>
|
Wafer thickness |
500 micrometer
|
Resistivity |
<0.01
|
Polished |
Front Side Polished
|
Etched |
Back Side Etched
|
SiO2 Oxide Thickness |
300 nm (dry) |
Provided in single wafer box
Single Crystal Silicon N Type
It is clear that silicon, which has been the dominant material in the semiconductor industry for some time, will carry us into the coming ultra-large-scale integration (ULSI) and system-on-a-chip (SOC) eras, even though silicon is not the optimum choice for every electronic device. Semiconductor devices and circuits are fabricated through many mechanical, chemical, physical, and thermal processes. The preparation of silicon single-crystal substrates with mechanically and chemically polished surfaces is the first step in the long and complex device fabrication process. In this chapter, the approaches currently used to prepare silicon materials (from raw materials to single-crystalline silicon) are discussed.
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization: If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Crystal Silicon dioxide Wafer N-type (4 inches) RELATED INFORMATION
Storage Conditions:
Airtight sealed, avoid light, and keep dry at room temperature.
Please contact us for customization and price inquiry
Email: contact@nanochemazone.com
Note: We supply different size ranges of Nano and micron as per the client’s requirements and also accept customization in various parameters.