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CVD Graphene on Silicon Substrate
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HomeGraphene NanostructuresCVD Graphene CVD Graphene on Silicon Substrate
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CVD Graphene on Quartz Substrate
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CVD Graphene on SiO2 Substrate
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CVD Graphene on Silicon Substrate

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Product Name

CVD Graphene On Silicon Substrate

Stock No. NCZ-GSW-0017
Purity > 99.9%
Graphene Film
FET Electron Mobility on Al2O3 2000 cm2/Vs
Hall Electron Mobility on SiO2/Si  4000 cm2/Vs
Sheet Resistance  450±40 Ω/sq (1cm x1cm)

PRODUCT DETAIL

CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)

Transparency >95%

PREPARATION METHOD:

  1. Copper-based graphene is prepared by CVD method.
  2. Graphene is transferred from copper to silicon substrate.

SILICON WAFER:

Wafer Thickness: 525 µm, (customization is possible)
Resistivity: <0.01 ohm-cm
Type/Dopant: P/N
Orientation: <100> (customization is possible)
Front Surface: Polished
Back Surface: Etched
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Description

Note: For pricing & ordering information, please contact us at info@chemazone.in
Please contact us for quotes on Larger Quantities & Customization. E-mail: info@chemazone.in

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

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Categories: CVD Graphene, Graphene Nanostructures
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