Graphene on Ultra-Flat Thermal SiO₂ Substrate

Product Name	Graphene on Ultra-Flat Thermal SiO2 Substrate
Stock No.	NCZ-GSW-0011
Purity	> 99.9%
Graphene Film
FET Electron Mobility on Al₂O₃	2000 cm²/Vs
Hall Electron Mobility on SiO²/Si	4000 cm²/Vs
Sheet Resistance	450±40 Ω/sq (1cm x1cm)

PRODUCT DETAIL

Characteristics

Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers

The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
Graphene coverage of the TEM grid is 75-95 %

Type	Thickness of the Graphene	Transparency	Support Film
1 Layer	~0.35nm	~96.4%	Ultra-flat Silicon
2 Layers	~0.7nm	~92.7%	Ultra-flat Silicon
3-5 Layers	1.0-1.7nm	~85.8-90.4%	Ultra-flat Silicon
6-8 Layers	2.1-2.8nm	~78.5-83.2%	Ultra-flat Silicon

Please contact us for customization and price inquiry.

Description
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Description

Note: For pricing & ordering information, please contact us at info@chemazone.in
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

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